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| (R) SO2222AW SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type SO2222AW s Marking 20W s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907AW SOT-323 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 75 40 6 0.6 0.8 200 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/5 SO2222AW THERMAL DATA R thj-amb * Thermal Resistance Junction-Ambient 2 Max 625 o C/W * Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 60 V V CE = 60 V V CB = 75 V V CB = 75 V V EB = 3 V I C = 10 mA 40 Min. Typ. Max. 10 20 10 10 15 Unit nA nA nA A nA V T j = 150 o C V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current Gain I C = 10 A 75 V V (BR)EBO I E = 10 A 6 V V CE(sat) V BE(sat) h FE I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA IC IC IC IC IC IC = = = = = = 0.1 mA 1 mA 10 mA 150 mA 150 mA 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 1 V V CE = 10 V f = 1 MHz f = 1MHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz 50 75 5 25 2 0.25 0.6 35 50 75 100 50 40 270 4 20 4 0.3 1 1.2 2 V V V V 300 fT C CBO C EBO NF hie h re Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Input Impedance Reverse Voltage Ratio I C = 20 mA V CE = 20V f = 100MHz IE = 0 IC = 0 V CB = 10 V VEB = 0.5 V MHz 8 25 pF pF dB 8 1.25 8 4 300 375 35 200 S S K K 10 -4 10 -4 I C = 0.1 mA V CE = 10 V f = 200 Hz R G = 1 K V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA hfe h oe Small Signal Current Gain Output Admittance Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/5 SO2222AW ELECTRICAL CHARACTERISTICS (Continued) Symbol td tr ts tf Parameter Delay Time Rise Time Storage Time Fall Time Test Conditions I C = 150 mA V CC = 30 V I C = 150 mA V CC = 30 V I B = 15 mA I B1 = - I B2 = 15 mA Min. Typ. 5 12 185 24 Max. 10 25 225 60 Unit ns ns ns ns Pulsed: Pulse duration = 300 s, duty cycle 2 % 3/5 SO2222AW SOT-323 MECHANICAL DATA mm MIN. A A1 b c D E e H L Q 1.8 0.1 0 0.8 0 0.25 0.1 1.8 1.15 2.0 1.25 0.65 2.1 0.2 2.4 0.3 10o 0.070 0.004 0 TYP. MAX. 1.1 0.1 0.4 0.26 2.2 1.35 MIN. 0.031 0 0.009 0.004 0.070 0.045 0.078 0.049 0.025 0.082 0.007 0.094 0.011 10o inch TYP. MAX. 0.043 0.003 0.015 0.010 0.086 0.053 DIM. FOOT PRINT SOT-323 4/5 SO2222AW Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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